Body contact formation in partially depleted silicon on...

Details Body contact formation in partially depleted silicon on... Body contact formation in partially depleted silicon on...

2003-12-22

2008-11-18

Menz, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000

Reexamination Certificate

active

07453121

ABSTRACT:
An SOI device (100) has a gate electrode with one or more additional gate regions (120), and oxygen or halogen ions (128) under the additional gate regions (120). The oxygen or halogen ions (128) form thicker gate oxide regions or shallow trench isolation regions.

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