Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-14
2007-08-14
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S360000, C257S363000, C257SE29014
Reexamination Certificate
active
11001899
ABSTRACT:
A protection circuit for protecting an integrated circuit pad201against an ESD pulse, which comprises a discharge circuit having an elongated MOS transistor202(preferably pMOS) in a substrate205(preferably n-type), said discharge circuit operable to discharge the ESD pulse to the pad, to ground203. The embodiment further contains a pump circuit connected to the pad for receiving a portion of the pulse's current; the pump circuit comprises a component221determining the size of this current portion (for example, another transistor, a string of forward diodes, or a reverse Zener diode), wherein the component is connected to ground. A discrete resistor222(for example about 40 to 60Ω) is connected between the pad and the component and is operable to generate a voltage drop (about 0.5 to 1.0 V) by the current portion. A plurality of contacts to the substrate connects to the resistor so that the voltage drop is uniformly impressed on the substrate to ensure uniform turn-on of the elongated transistor for uniform pulse discharge.
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Boselli Gianluca
Duvvury Charvaka
Salling Craig T.
Brady W. James
Cao Phat X.
Kalam Abul
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