Semiconductor device manufacturing: process – Semiconductor substrate dicing – With attachment to temporary support or carrier
Reexamination Certificate
2007-12-04
2007-12-04
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
With attachment to temporary support or carrier
C438S106000, C438S108000, C438S114000, C438S160000, C438S613000, C438S614000
Reexamination Certificate
active
11029676
ABSTRACT:
To fabricate a semiconductor device, a pattern of recesses and lands is formed on a copper sheet as a matrix sheet, and BGA pads are formed on the lands on the copper sheet. An insulating layer is formed on the copper sheet to transfer the pattern of recesses and lands from the copper sheet to the insulating layer for thereby forming recesses in the insulating layer and placing BGA pads in the recesses in the insulating layer. Vias are formed through the insulating layer, and a conductive layer serving as circuits and interconnections is formed, the conductive layer being connected to the BGA pads by the vias. When the copper sheet is removed, the BGA pads are positioned within the recesses in the insulating layer. The BGA pads have surfaces positioned higher than the bottom of the recesses and lower than the surface of the insulating layer. A semiconductor chip is mounted on the conductive layer, and solder balls are joined to the BGA pads. Both the productivity of a process of mounting the solder balls and the bonding strength of the solder balls are increased.
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Jr. Carl Whitehead
Mitchell James M
NEC Toppan Circuit Solutions, Inc.
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