Patent
1989-08-28
1991-06-25
James, Andrew J.
357 60, 357 58, 357 63, 357 38, N01L 29161, N01L 29205, N01L 29225
Patent
active
050271687
ABSTRACT:
The present invention comprises a light emitting diode formed in silicon carbide and that emits visible light having a wavelength of between about 465-470 nanometers, or between about 455-460 nanometers, or between about 424-428 nanometers. The diode comprises a substrate of alpha silicon carbide having a first conductivity type and a first epitaxial layer of alpha silicon carbide upon the substrate having the same conductivity type as the substrate. A second epitaxial layer of alpha silicon carbide is upon the first epitaxial layer, has the opposite conductivity type from the first layer, and forms a p-n junction with the first epitaxial layer. In preferred embodiments, the first and second epitaxial layers have carrier concentrations sufficiently different from one another so that the amount of hole current and electron current that flow across the junction under biased conditions are different from one another and so that the majority of recombination events take place in the desired epitaxial layer.
REFERENCES:
patent: 3458779 (1969-07-01), Blank et al.
patent: 3508015 (1970-04-01), Miller et al.
patent: 3530324 (1970-09-01), Koller
patent: 3535469 (1970-10-01), Miller
patent: 3565703 (1971-02-01), Kamath
patent: 3611064 (1971-10-01), Hall et al.
patent: 3649384 (1972-03-01), Kamath
patent: 3715636 (1973-02-01), Jaffe et al.
patent: 3773553 (1973-11-01), Kamath
patent: 3960619 (1976-06-01), Seiter
patent: 3972749 (1976-08-01), Pavlichenko
patent: 3986193 (1976-10-01), Vodakov et al.
patent: 3999206 (1976-12-01), Babenko et al.
patent: 4531142 (1985-07-01), Weyrich et al.
Brander, `Solution Grown SiC pn Junctions`, Brit. J. of Appl. Phys., Ser, 2, vol. 2, 1969.
Blank, Luminescent Devices, 1973.
Ikeda, `Site Effect on Impurity Location Levels in 4H, 6H and 15 R SiC`, Physical Review, vol. 22, #6, Sep. 15, 1980.
V. A. Dmitriev, Silicon Carbide Light-Emitting Diodes for the Blue-Violet Region, Sov. Tech. Phys. Lett 11(2), Feb., 1985.
L. Hoffmann, Silicon Carbide Blue Light Emitting Diodes with Improved External Quantum Efficienty, J. Appl. Phys. 53(10), Oct., 1982.
Shigehiro Nishino, Blue-Emitting Diodes of 6H-SiC Prepared by Chemical Vapor Deposition, Japanese Journal of Applied Physics, vol. 19, No. 7, Jul., 1980, pp. L353-L356.
W. V. Munch, Silicon Carbide Blue-Emitting Diodes Produced by Liquid-Phase Epitaxy, Solid-State Electronics, vol. 21, pp. 1129-1132, Pergamon Press Ltd. 1978.
W. V. Munch, Silicon Carbide Technology for Blue-Emitting Diodes, Journal of Electronic Materials, vol. 6, No. 4, 1977.
W. V. Munch, Silicon Carbide Light-Emitting Diodes with Epitaxial Junctions, Solid-State Electronics, 1976, vol. 19, pp. 871-874, Pergamon Press.
Specifications for LBD5410 Blue T1 3/4 LED Lamp, Siemens Components, Inc., Optoelectronics Division, 19000 Homestead Road, Cupertino, Calif. 95014.
A New Degradation Phenomenon in Blue Light Emitting Silicon Carbide Diodes, G. Ziegler and D. Theis, IEEE Transactions of Electron Devices, vol. Ed.-28, No. 4, Apr., 1981.
Light-Emitting Devices Based on Silicon Carbide; E. E. Violin and Yu. M. Tairov (1973).
Luminescent Devices, J. M. Blank (1973).
Single Crystal Growth of SiC Substrate Material for Blue Light Emitting Diodes, G. Ziegler, P. Lanig, D. Theis, and C. Weyrich, IEFF Transactions on Electronic Devices, vol. Ed-30, No. 4, Apr., 1983.
Fabrication of 6H-SiC Light-Emitting Diodes by a Rotation Dipping Technique: Electroluminescence Mechanisms, M. Ikeda, T. Hayakawa, S. Yamagiwa, H. Matsunami, and T. Tanaka, J. Appl. Phys. 50(12), Dec., 1979.
Structure and Characteristics of Silicon Carbide Light-Emitting Junctions, Lyle Patrick, J. Appl. Phys., vol. 23, No. 7, Jul., 1957.
Solution Grown SiC p-n Junctions, R. W. Brander and R. P. Sutton, The General Electric Co. Ltd., Central Research Lab. Hirst Research Cent. Wembley, Middlesex, Brit., J. Appl. Phys. (J. Phys. D), 1969, Ser. 2, vol. 2.
Cathodoluminescence Measurements on a Silicon Carbide Light-Emitting Diode, Ralph M. Potter, Lighting Res. and Tech. Serv. Operation, General Electric Co., Nela Park, Cleveland, Ohio, J. Appl. Phys., vol. 43, No. 2, Feb. 1972.
Semiconductor Light Sources from Silicon Carbide, G. F. Kholuyanov and Yu. A. Vodakov (1973).
Photoluminescence Due to Al, Ga, and B Acceptors in 4H-, 6H-, and 3C-SiC Grown from a Si Melt, A. Suzuki, H. Matsunami, and T. Tanaka, Dept. of Elec., Kyoto Uni., Kyoto 606, Japan, Mech. of GaAs Anodization, vol. 124, No. 2, Feb. 1977.
SiC Blue LED's by Liquid-Phase Epitaxy, H. Matsunami, M. Ikeda, A. Suzuki, and T. Tanka, IEEE Trans. of Elec. Devices, vol. Ed.-24, No. 7, Jul. 1977.
Current-Voltage and Brightness-Current Characteristics of Silicon Carbide Light-Emitting Diodes under Prebreakdown Conditions, M. S. Saidov, Kh. A. Sharmuratov, and A. Umurzakov, Sov. Phys. Semicond, 12(9), Sep. 1978.
Site Effect on the Impurity Levels in 4H, 6H, and 15R SiC, M. Ikeda, H. Matsunami, and T. Tanaka, Dept. of Elec., Faculty of Engineering, Kyoto Uni., Kyoto 606, Japan, Physical Review B, vol. 22, No. 6, Sep. 15, 1980.
Kuroda et al.; Step-Controlled VPE Growth of SiC Single Crystals at Low Temperatures; Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, 1987, pp. 227-230.
Avramenko et al.; Edge Electroluminescence of 6H-SiC; Sov. Phys. Semicond. 19(10), Oct., 1985; p. 1147.
Cree Research Inc.
James Andrew J.
Meier S.
LandOfFree
Blue light emitting diode formed in silicon carbide does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Blue light emitting diode formed in silicon carbide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Blue light emitting diode formed in silicon carbide will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1043766