Blocking dielectric engineered charge trapping memory cell...

Details Blocking dielectric engineered charge trapping memory cell... Blocking dielectric engineered charge trapping memory cell...

2007-08-27

2010-06-15

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257SE21423, C257SE29309, C438S287000

Reexamination Certificate

active

07737488

ABSTRACT:
A band gap engineered, charge trapping memory cell includes a charge trapping element that is separated from a gate by a blocking layer of metal doped silicon oxide material having a medium dielectric constant, such as aluminum doped silicon oxide, and separated from the semiconductor body including the channel by an engineered tunneling dielectric.

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