Blocked source node field-effect circuitry

Details Blocked source node field-effect circuitry Blocked source node field-effect circuitry

1979-08-28

1981-02-24

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

307238, 365156, 365176, 365189, 357 23, 357 4, G11C 1140, H01L 2978

Patent

active

042531624

ABSTRACT:
A unidirectional conducting element is series connected between an input terminal and the source electrode of an insulated-gate field-effect transistor (IGFET) having an electrically floating substrate. The unidirectional conducting element is poled to conduct in a direction which is opposite to the forward direction of the source-to-substrate junction in order to isolate the substrate of the IGFET and its associated capacitance from a signal source connected to the input terminal. The invention is particularly useful in high density, high speed, random access memories (RAMs) to prevent the loading of bit lines by non-selected memory cells.

REFERENCES:
patent: 3958266 (1976-05-01), Athans
patent: 4053916 (1977-10-01), Cricchi et al.
patent: 4063225 (1977-12-01), Stewart
patent: 4075690 (1978-02-01), Oberman et al.

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