Block contact architectures for nanoscale channel transistors

Details Block contact architectures for nanoscale channel transistors Block contact architectures for nanoscale channel transistors

2011-03-01

2011-03-01

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S388000, C257S288000, C257S213000, C257SE29130

Reexamination Certificate

active

07898041

ABSTRACT:
A contact architecture for nanoscale channel devices having contact structures coupling to and extending between source or drain regions of a device having a plurality of parallel semiconductor bodies. The contact structures being able to contact parallel semiconductor bodies having sub-lithographic pitch.

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