Bloch-line memory element and RAM memory

Details Bloch-line memory element and RAM memory Bloch-line memory element and RAM memory

1991-02-08

1993-09-07

Popek, Joseph A.

Static information storage and retrieval

Magnetic shift registers

Thin film

G11C 1114

Patent

active

RE0343706

ABSTRACT:
The present invention relates to a Bloch-line memory element and a nonvolatile RAM memory using such a Bloch-line memory element. The Bloch-line memory element comprises a planar magnetic memory element having magnetic domains separated by a wall which contains a Bloch-line disposed within the individual memory element. Coincident write lines interact with the magnetic element for writing a Bloch-line to a predetermined area within the memory element. For sensing the presence or absence of a Bloch-line within the predetermined area, one write conductor and a sense line are used for determining the logic state of the particular memory element. A plurality of memory elements are disposed in an address matrix and can be selected for reading from or writing to the particular Bloch-line RAM memory element for determining or writing bits of words.

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NSWC TR 82-568, The Crosstie Random Access Memory, Part II-Initial Test Rlts, by Paul Hunter, Leonard J. Schwee, Mary T. Shephard, Frank Salton, Jan. 1983.
Journal of Applied Physics, vol. 53, No. 3, Mar. 1982, pp. 2762-2764.

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