Blanket resist to protect active side of semiconductor

Details Blanket resist to protect active side of semiconductor Blanket resist to protect active side of semiconductor

2006-09-27

2009-08-11

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S216000, C438S591000, C438S745000, C257SE21487

Reexamination Certificate

active

07572735

ABSTRACT:
Yield loss in semiconductor processing is mitigated by forming a resist over an active side of a semiconductor workpiece or wafer, as well as around the edge of the wafer. The resist mitigates the creation of contaminants, such as nitride flakes, for example, that can develop when an oxide, nitride, oxide (ONO) layer is removed from the back or in-active side of the wafer. In the absence of the resist, such flakes may migrate to the front or active side of the wafer and cause defects to form therein, which can result in yield loss.

REFERENCES:
patent: 2002/0064960 (2002-05-01), Hoepfner

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