Blanket oxidation for contact isolation

Details Blanket oxidation for contact isolation Blanket oxidation for contact isolation

1997-06-20

1998-03-31

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438620, 438688, 438768, H01L 21283, H01L 21316

Patent

active

057338175

ABSTRACT:
A method of forming isolated metal contacts during fabrication of semiconductor devices including blanket forming contact metal on a semiconductor device having a mesa structure with a first layer overlying an upper surface, a second layer overlying a lower surface and a third, substantially thinner layer overlying the sidewall therebetween. The contact metal is blanket oxidized using deep ultra violet light until the third layer is substantially completely oxidized thereby electrically isolating the first layer from the second layer.

REFERENCES:
patent: 4496419 (1985-01-01), Nulman et al.
patent: 4716131 (1987-12-01), Okazawa et al.
patent: 5206187 (1993-04-01), Doan et al.
patent: 5624874 (1997-04-01), Lim et al.

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