BJT and method for fabricating the same

Details BJT and method for fabricating the same BJT and method for fabricating the same

2007-10-31

2010-10-19

Parker, Kenneth A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S477000, C257SE29114, C257SE21538, C257SE21537, C257S773000, C438S335000, C438S370000

Reexamination Certificate

active

07816763

ABSTRACT:
According to one embodiment, a collector electrode including metal is used for a sink region for connecting an n+ type buried layer, so that the sink region can be narrowly formed. Further, an interval between a base region and the collector electrode can be reduced, thereby considerably decreasing the size of the transistor. Furthermore, collector resistance is reduced, so that the performance of the transistor can be improved.

REFERENCES:
patent: 4910572 (1990-03-01), Kameyama
patent: 5187554 (1993-02-01), Miwa
patent: 2005/0020023 (2005-01-01), Lachner
patent: 59182536 (1984-10-01), None
patent: 02-152241 (1990-12-01), None
Office Action from the Korean Patent Office on Dec. 18, 2007, in corresponding Application No. 10-2006-0134635 (3 pages).

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