Bitline structure for DRAM and method of forming the same

Details Bitline structure for DRAM and method of forming the same Bitline structure for DRAM and method of forming the same

2006-07-11

2006-07-11

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S382000

Reexamination Certificate

active

07075138

ABSTRACT:
A bitline structure for DRAM and the method for forming the same. The bitline structure includes a first dielectric layer on a substrate, a bitline contact hole, formed through the first dielectric layer, a bitline contact, formed in the bitline contact hole, a second dielectric layer, formed on the first dielectric layer and covering the bitline contact, a peripheral contact hole, formed through the first dielectric layer and the second dielectric layer, a peripheral contact, formed in the peripheral contact hole, a first bitline, formed in the second dielectric layer and contacting the bitline contact, and a second bitline, formed in the second dielectric layer and contacting the peripheral contact.

REFERENCES:
patent: 6008084 (1999-12-01), Sung
patent: 6255685 (2001-07-01), Kuroda
patent: 6784501 (2004-08-01), Lane et al.
patent: 6790771 (2004-09-01), Wu

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