Bitline direction shielding to avoid cross coupling between...

Details Bitline direction shielding to avoid cross coupling between... Bitline direction shielding to avoid cross coupling between...

2007-05-22

2007-05-22

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C438S257000, C438S294000, C365S185010, C365S185020, C365S185170

Reexamination Certificate

active

10680665

ABSTRACT:
A NAND flash memory structure and method of making a flash memory structure with shielding in the bitline direction as well as in wordline and diagonal directions from Yupin effect errors and from disturbs.

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