Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Reexamination Certificate
2006-09-12
2006-09-12
Tran, Michael T. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
C365S203000
Reexamination Certificate
active
07106635
ABSTRACT:
A circuit and method for boosting bitline performance uses a bitline booster circuit to allow long bitlines, with large numbers of memory cells attached, to discharge to a digital zero in a faster time. One bitline booster circuit requires only two additional NOR gates, two additional transistors, and one additional control signal. Consequently, the bitline booster circuit does not require a significant number of added components, does not require multiple control signals and takes up minimal additional silicon area.
REFERENCES:
patent: 4982367 (1991-01-01), Miyatake
patent: 5115412 (1992-05-01), Tobita
patent: 5173877 (1992-12-01), Flannagan et al.
patent: 5255235 (1993-10-01), Miyatake
Gunnison McKay & Hodgson, L.L.P.
McKay Philip J.
Sun Microsystems Inc.
Tran Michael T.
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