Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-11-02
2010-02-02
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185200, C365S185210
Reexamination Certificate
active
07656714
ABSTRACT:
The NOR flash memory device according to the present invention is operated by a high voltage supplied from bitline selection transistors and includes a bitline bias circuit for supplying a bias voltage of a constant level to the bitline bias transistor. In accordance with the present invention, it is possible to stably supply a desired voltage closing to a power voltage to the bitline bias transistor.
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Jeon Hong-Soo
Lee Seung-Keun
Graham Kretelia
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
Zarabian Amir
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