Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2007-05-22
2009-02-10
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S154000, C365S227000
Reexamination Certificate
active
07489540
ABSTRACT:
A memory device comprises a bit cell comprising a bit storage device, a first word line, a second word line, and a first transfer gate to connect the bit storage device to a bit line. The first transfer gate is configurable to at least four conductance states based on a state of the first word line and a state of the second word line. The memory device further comprises control logic to configure, for an access to the bit cell, the state of the first word line and the state of the second word line based on an access type of the access.
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Kenkare Prashant U.
Ramaraju Ravindraraj
Freescale Semiconductor Inc.
Hoang Huan
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