Bitcell having a unity beta ratio

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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C365S189090

Reexamination Certificate

active

07154770

ABSTRACT:
In one embodiment, the present invention includes a memory device formed of a latch device that includes a pair of pull-up transistors and a pair of pull-down transistors to store data, and a pair of wordline transistors coupled between a wordline and the latch device. The pull-down transistors and the wordline transistors may be of substantially the same size and thus may have a unity beta ratio.

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Fukaura, Y., K. Kasai, Y. Okayama, H. Kawasaki, K. Isobe, M. Kanda, Ishimaru, and J. Ishiuchi,A Highly Manufacturable High Density embedded SRAM Technology for 90nm CMOS. IEDM '02. Digest. International. 2002. pp. 415-418.

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