Bit line structure and production method thereof

Details Bit line structure and production method thereof Bit line structure and production method thereof

2007-08-28

2007-08-28

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S508000, C257S758000, C257SE21682, C257SE27103, C438S300000, C438S304000

Reexamination Certificate

active

11273668

ABSTRACT:
The disclosure relates to a bit line structure and an associated production method for the bit line structure. In the bit line structure, at least in a region of a second contact and a plurality of first contact adjoining the latter, an isolation trench is filled with an electrically conductive trench filling layer. The isolation trench connects to the first doping regions adjoining the second contact for the purpose of realizing a buried contact bypass line.

REFERENCES:
patent: 4939567 (1990-07-01), Kenney
patent: 5544103 (1996-08-01), Lambertson
patent: 5760452 (1998-06-01), Terada
patent: 5859466 (1999-01-01), Wada
patent: 6438030 (2002-08-01), Hu et al.
patent: 2003/0087519 (2003-05-01), Manger et al.
patent: 100 62 245 (2002-07-01), None
patent: 1 045 440 (2000-10-01), None

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