Bit line structure and method of fabrication

Details Bit line structure and method of fabrication Bit line structure and method of fabrication

2007-11-06

2007-11-06

Dang, Trung (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257SE27103, C438S262000

Reexamination Certificate

active

11592844

ABSTRACT:
The invention relates to a bit line structure having a surface bit line (DLx) and a buried bit line (SLx), the buried bit line (SLx) being formed in a trench with a trench insulation layer (6) and being connected to doping regions (10) with which contact is to be made via a covering connecting layer (12) and a self-aligning terminal layer (13) in an upper partial region of the trench.

REFERENCES:
patent: 5430673 (1995-07-01), Hong et al.
patent: 5796167 (1998-08-01), Koga
patent: 6008522 (1999-12-01), Hong et al.
patent: 6153471 (2000-11-01), Lee et al.
patent: 6348374 (2002-02-01), Athavale et al.
patent: 6734482 (2004-05-01), Tran et al.
patent: 6787843 (2004-09-01), Tempel
patent: 2003/0007386 (2003-01-01), Georgakos et al.
patent: 2003/0230783 (2003-12-01), Willer et al.
patent: 10062245 (2000-12-01), None
patent: WO 01/99152 (2001-12-01), None
PCT International Search Report PCT/DE 03/02676.

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