Static information storage and retrieval – Read/write circuit – Data refresh
Patent
1996-12-27
1998-07-07
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Data refresh
36518909, G11C 700
Patent
active
057779392
ABSTRACT:
A bit line sense amplifier driving circuit of a semiconductor memory device which has first and second refresh cycle functions includes a bit line sense amplifier driver unit for supplying a pull-up bias potential signal and a pull-down bias potential signal to a bit line sense amplifier; a bit line sense amplifier predriver unit for controlling the current flowing to the bit line sense amplifier driver unit; and a bit line sense amplifier predriver control unit for controlling the bit line sense amplifier predriver unit according to the first and second refresh cycle functions.
REFERENCES:
patent: 4677592 (1987-06-01), Sakurai et al.
patent: 5296801 (1994-03-01), Ohtsuka et al.
patent: 5317538 (1994-05-01), Eaton, Jr.
patent: 5379400 (1995-01-01), Barakat et al.
patent: 5594695 (1997-01-01), Yim et al.
patent: 5633831 (1997-05-01), Tsukude et al.
Ho Hoai V.
Hyundai Electronics Industries Co,. Ltd.
Nath Gary M
Nelms David C.
LandOfFree
Bit line sense amplifier driving circuit of a semiconductor memo does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bit line sense amplifier driving circuit of a semiconductor memo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bit line sense amplifier driving circuit of a semiconductor memo will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1213916