Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2007-10-16
2007-10-16
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S207000, C365S190000
Reexamination Certificate
active
11030614
ABSTRACT:
There is provided a semiconductor memory device that can calculate an offset voltage of a bit line sense amplifier. The semiconductor memory device includes a cell array, an edge bit line sense amplifier for amplifying data of an edge cell array, and a power supply part for applying a predetermined voltage to the edge bit line sense amplifier. The power supply part includes a first power supply part for supplying a predetermined voltage to a bit line of the edge bit line sense amplifier and a second power supply part for supplying a predetermined voltage to a complementary bit line of the edge bit line sense amplifier.
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Blakely & Sokoloff, Taylor & Zafman
Hynix / Semiconductor Inc.
Le Thong Q.
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