Static information storage and retrieval – Systems using particular element – Semiconductive
Reexamination Certificate
2007-10-23
2007-10-23
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Semiconductive
C365S052000, C365S072000
Reexamination Certificate
active
11248506
ABSTRACT:
A BLT can include a different channel length, channel width, or both to compensate for bit line loading effects. The channel length and/or channel width of the transistor structure can be configured so as to achieve a desired loading. Thus, the bit line transistor structure can improve global metal bit line loading uniformity and provide greater uniformity in bit line bias. Additionally, the greater uniformity in bit line bias can improve reliability.
REFERENCES:
patent: 4959812 (1990-09-01), Momodomi et al.
patent: 5182725 (1993-01-01), Andoh et al.
patent: 5321660 (1994-06-01), Sani et al.
patent: 5528547 (1996-06-01), Aritome et al.
patent: 5554867 (1996-09-01), Ajika et al.
patent: 5559737 (1996-09-01), Tanaka et al.
patent: 6067249 (2000-05-01), Lee et al.
patent: 6879529 (2005-04-01), Yamada
Huang Lan Ting
Liu Chen Chin
Wu Po Hsuan
Yang Ling Kuey
Baker & McKenzie LLP
Macronix International Co. Ltd.
Nguyen Tan T.
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