Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into...
Reexamination Certificate
2005-10-21
2008-10-07
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
C257SE21657, C257SE21679
Reexamination Certificate
active
07432178
ABSTRACT:
A method for performing a bit line implant is disclosed. The method includes forming a group of structures on an oxide-nitride-oxide stack of a semiconductor device. Each structure of the group of structures includes a polysilicon portion and a hard mask portion. A first structure of the group of structures is separated from a second structure of the group of structures by less than 100 nanometers. The method further includes using the first structure and the second structure to isolate a portion of the semiconductor device for the bit line implant.
REFERENCES:
patent: 5032881 (1991-07-01), Sardo et al.
patent: 5416349 (1995-05-01), Bergemont
patent: 5753557 (1998-05-01), Tseng
patent: 6171940 (2001-01-01), Huang
patent: 6576562 (2003-06-01), Ohuchi et al.
patent: 6605541 (2003-08-01), Yu
patent: 6607955 (2003-08-01), Lee
patent: 6620741 (2003-09-01), Gracias et al.
patent: 6764903 (2004-07-01), Chan et al.
patent: 6797565 (2004-09-01), Yang et al.
patent: 6803284 (2004-10-01), Hwang
patent: 6864556 (2005-03-01), You et al.
patent: 6927145 (2005-08-01), Yang et al.
patent: 7037850 (2006-05-01), Lee et al.
patent: 2002/0086547 (2002-07-01), Mui et al.
patent: 2002/0132430 (2002-09-01), Willer et al.
patent: 2003/0096503 (2003-05-01), Cho et al.
patent: 2004/0005778 (2004-01-01), Kronke et al.
patent: 2004/0058518 (2004-03-01), Fang et al.
patent: 2005/0136630 (2005-06-01), Kim
patent: 2005/0212035 (2005-09-01), Utsuno et al.
patent: 2006/0030151 (2006-02-01), Ding et al.
patent: 2006/0154477 (2006-07-01), Geng et al.
patent: 2006/0264002 (2006-11-01), Tran et al.
patent: 101 10 150 (2002-09-01), None
patent: 1 170 800 (2002-01-01), None
2002 IEEE International Solid-State Circuits Conference, Session 6, “SRAM and Non-Volatile Memories,” Feb. 4, 2004, 6 pages.
2002 IEEE International Solid-State Circuits Conference, 23 pages.
Hui Angela T.
Qian Weidong
Ramsbey Mark T.
Sun Yu
Yang Jean
Advanced Micro Devices , Inc.
Harrity & Snyder LLP
Sarkar Asok K
Spansion LLC
LandOfFree
Bit line implant does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bit line implant, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bit line implant will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4001409