Bit end design for pseudo spin valve (PSV) devices

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making named article

Reexamination Certificate

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C430S313000, C430S314000, C430S316000, C430S318000

Reexamination Certificate

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10706067

ABSTRACT:
In a process of making a magnetoresistive memory device, a mask layout is produced by use of any suitable design tool. The mask layout is laid out in grids having a central grid forming a central section and grids forming bit end sections, and the grids of the bit end sections are rectangles. A mask is made by use of the mask layout, and the mask has stepped bit ends. The mask is used to make a magnetic storage layer having tapered bit ends, to make a magnetic sense layer having tapered bit ends, and to make a non-magnetic layer having tapered bit ends. The non-magnetic layer is between the magnetic sense layer and the magnetic storage layer.

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patent: 5949707 (1999-09-01), Pohm et al.
patent: 5966322 (1999-10-01), Pohm et al.
patent: 6317359 (2001-11-01), Black et al.
patent: 6392924 (2002-05-01), Liu et al.
patent: 2004/0188382 (2004-09-01), Mikelson et al.
James Daughton, Magnetoresistive Random Access Memory (MRAM), Feb. 4, 2000, pp. 1-13.

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