Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-07-17
2007-07-17
Mai, Son L. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
11223548
ABSTRACT:
Roughly described, a magnetic structure includes an electrically conductive path for carrying current flow, a soft magnetic material with high permeability value in magnetic communication with the current flow so that it can be magnetized in either of two directions, and a magnetic device such as a magnetic random access memory cell, having an active layer that is quantum mechanically or magnetostatically coupled to the soft magnetic material. The soft magnetic material acts as an intermediary between the magnetic induction of the current flow and the magnetization of the active layer of the magnetic device to reduce the writing current.
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Chen Hsu Shun
Ho Chia-Hua
Haynes Beffel & Wolfeld
Macronix International Co. Ltd.
Mai Son L.
Wolfeld Warren S.
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