Bis-o-nitrophenols derivatives and poly-o-hydroxyamides,...

Details Bis-o-nitrophenols derivatives and poly-o-hydroxyamides,... Bis-o-nitrophenols derivatives and poly-o-hydroxyamides,...

2006-10-24

2006-10-24

Feely, Michael J. (Department: 1712)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S758000, C438S778000, C528S271000, C558S270000, C558S271000, C558S272000

Reexamination Certificate

active

07125814

ABSTRACT:
Materials for dielectrics and/or buffer layers in microelectronics utilize polymers can be based on bis-o-nitrophenols. The bis-o-nitrophenols carry a tert-butoxycarbonyl group on at least one of the hydroxyl groups. The polybenzoxazoles prepared from these compounds have a lower dielectric constant than corresponding polymers which are prepared from bis-o-nitrophenols that do not have a tert-butoxycarbonyl group.

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Machine Translation of JP 09-020782, provided by JPO website.
Copending U.S. Appl. No. 10/244,839, Sezi, filed Sep. 16, 2002.
Copending U.S. Appl. No. 10/244,802, Sezi, filed Sep. 16, 2002.
Copending U.S. Appl. No. 10/244,280, Sezi, filed Sep. 16, 2002.

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