Birdsbeak encroachment using combination of wet and dry etch for

Details Birdsbeak encroachment using combination of wet and dry etch for Birdsbeak encroachment using combination of wet and dry etch for

1998-12-07

2000-05-23

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438225, 438297, 438362, H01L 2176

Patent

active

060665459

ABSTRACT:
A technique for reducing active area encroachment (birdsbeak) by using a polysilicon hard mask combined with both wet and dry etch for the isolation nitride. This process forms a thinner layer of nitride adjacent the openings for oxide growth, which reduces stress at the silicon
itride interface. The advantages include control over birdsbeak, reliable gate oxide quality, low junction leakage current, an improved active area, improved isolation, low peripheral junction leakage, and higher field transistor threshold voltage.

REFERENCES:
patent: 5039625 (1991-08-01), Reisman et al.
patent: 5702978 (1997-12-01), Gabriel et al.

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