Bipolar type static memory cell

Details Bipolar type static memory cell Bipolar type static memory cell

1983-11-03

1989-03-21

Larkins, William D.

Static information storage and retrieval

Systems using particular element

Flip-flop

357 44, 357 46, 357 92, H01L 2704, H03K 19091, G11C 1140

Patent

active

048150371

ABSTRACT:
A bipolar type static memory cell comprising two cross connected circuits, each of the circuits including a transistor and a load element is disclosed. An N-type epitaxial layer, grown on an N.sup.+ -type buried layer, is used as a collector region of the transistor, and a P-type layer formed in the N-type epitaxial layer and an N.sup.+ -type layer formed in the P-type layer are used as a base region and an emitter region of the transistor. A P-type diffusion layer is formed in the N-type epitaxial layer from the surface of the epitaxial layer to reach and contact the buried layer. The structure results in the memory cell parasitic diodes being effectively eliminated from the cell together with the unwanted charge storage effects of the diodes.

REFERENCES:
patent: 3909807 (1975-09-01), Fulton
patent: 4323913 (1982-04-01), Murrmann et al.
Hotta et al., IEEE J. of Solid State Circuits, vol. SC-13, No. 5, Oct. 1978, pp. 651-656.
Neus Aus Der Technik, No. 4, 1 Jul. 1969, p. 2.

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