Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With non-planar semiconductor surface
Reexamination Certificate
2005-06-28
2005-06-28
Wille, Douglas (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With non-planar semiconductor surface
C257S592000
Reexamination Certificate
active
06911716
ABSTRACT:
A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
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Chen Young-Kai
Chua Lay-Lay
Houtsma Vincent Etienne
Kopf Rose Fasano
Leven Andreas
Lucent Technologies - Inc.
McCabe John F.
Wille Douglas
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