Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Reexamination Certificate
2007-09-11
2007-09-11
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
C257S587000, C257S751000, C257S762000, C257SE23160, C257SE21021
Reexamination Certificate
active
10928240
ABSTRACT:
Many integrated circuits include a type of transistor known as a bipolar junction transistor, which has an emitter contact formed of polysilicon. Unfortunately, polysilicon has a relatively high electrical resistance that poses an obstacle to improving switching speed and current gain of bipolar transistors. Current fabrication techniques involve high temperature procedures that melt desirable low-resistance substitutes, such as aluminum, during fabrication. Accordingly, one embodiment of the invention provides an emitter contact structure that includes a polysilicon-carbide layer and a low-resistance aluminum, gold, or silver member to reduce emitter resistance. Moreover, to overcome manufacturing difficulties, the inventors employ a metal-substitution technique, which entails formation of a polysilicon emitter, and then substitution or cross-diffusion of metal for the polysilicon.
REFERENCES:
patent: 3571674 (1971-03-01), Yu et al.
patent: 3932226 (1976-01-01), Klatskin et al.
patent: 4157269 (1979-06-01), Ning et al.
patent: 4169000 (1979-09-01), Riseman
patent: 4234357 (1980-11-01), Scheppele
patent: 4252582 (1981-02-01), Anantha et al.
patent: 4442449 (1984-04-01), Lehrer et al.
patent: 4470852 (1984-09-01), Ellsworth
patent: 4483726 (1984-11-01), Isaac et al.
patent: 4507847 (1985-04-01), Sullivan
patent: 4651409 (1987-03-01), Ellsworth et al.
patent: 4670297 (1987-06-01), Lee et al.
patent: 4702941 (1987-10-01), Mitchell et al.
patent: 4800177 (1989-01-01), Nakamae
patent: 4855252 (1989-08-01), Peterman
patent: 4857481 (1989-08-01), Tam et al.
patent: 4893273 (1990-01-01), Usami
patent: 4959705 (1990-09-01), Lemnios
patent: 4987562 (1991-01-01), Watanabe
patent: 5010039 (1991-04-01), Ku et al.
patent: 5014242 (1991-05-01), Akimoto et al.
patent: 5040049 (1991-08-01), Raaijmakers
patent: 5051805 (1991-09-01), Custode
patent: 5059389 (1991-10-01), Finkl et al.
patent: 5118634 (1992-06-01), Neudeck et al.
patent: 5148260 (1992-09-01), Inoue et al.
patent: 5158986 (1992-10-01), Cha et al.
patent: 5187560 (1993-02-01), Yoshida et al.
patent: 5225372 (1993-07-01), Savkar et al.
patent: 5235204 (1993-08-01), Tsai
patent: 5241193 (1993-08-01), Pfiester, Jr. et al.
patent: 5268315 (1993-12-01), Prasad et al.
patent: 5280188 (1994-01-01), Iwasaki
patent: 5308440 (1994-05-01), Chino et al.
patent: 5324684 (1994-06-01), Kermani et al.
patent: 5334356 (1994-08-01), Baldwin et al.
patent: 5341016 (1994-08-01), Prall et al.
patent: 5355020 (1994-10-01), Lee et al.
patent: 5371035 (1994-12-01), Pfiester et al.
patent: 5384485 (1995-01-01), Nishida et al.
patent: 5388073 (1995-02-01), Usami et al.
patent: 5391911 (1995-02-01), Beyer et al.
patent: 5436496 (1995-07-01), Jerome et al.
patent: 5442226 (1995-08-01), Maeda et al.
patent: 5454928 (1995-10-01), Rogers et al.
patent: 5458702 (1995-10-01), Ono et al.
patent: 5470801 (1995-11-01), Kapoor et al.
patent: 5501645 (1996-03-01), Taniguchi et al.
patent: 5510645 (1996-04-01), Fitch et al.
patent: 5512785 (1996-04-01), Haver et al.
patent: 5516724 (1996-05-01), Ast et al.
patent: 5516745 (1996-05-01), Friesen et al.
patent: 5539227 (1996-07-01), Nakano
patent: 5541124 (1996-07-01), Miwa et al.
patent: 5563448 (1996-10-01), Lee et al.
patent: 5585308 (1996-12-01), Sardella
patent: 5587326 (1996-12-01), Takemura
patent: 5593921 (1997-01-01), Chen et al.
patent: 5619151 (1997-04-01), Akioka et al.
patent: 5639979 (1997-06-01), Chen et al.
patent: 5643806 (1997-07-01), Miwa et al.
patent: 5648280 (1997-07-01), Kato
patent: 5673058 (1997-09-01), Uragami et al.
patent: 5698890 (1997-12-01), Sato
patent: 5705425 (1998-01-01), Miura et al.
patent: 5710454 (1998-01-01), Wu
patent: 5723378 (1998-03-01), Sato
patent: 5731240 (1998-03-01), Kataoka
patent: 5745990 (1998-05-01), Lee et al.
patent: 5753967 (1998-05-01), Lin
patent: 5757072 (1998-05-01), Gorowitz et al.
patent: 5766999 (1998-06-01), Sato
patent: 5796151 (1998-08-01), Hsu et al.
patent: 5796166 (1998-08-01), Agnello et al.
patent: 5798544 (1998-08-01), Ohya et al.
patent: 5798559 (1998-08-01), Bothra et al.
patent: 5801444 (1998-09-01), Aboelfotoh et al.
patent: 5847439 (1998-12-01), Reinberg
patent: 5861340 (1999-01-01), Bai et al.
patent: 5891797 (1999-04-01), Farrar
patent: 5920121 (1999-07-01), Forbes et al.
patent: 5925918 (1999-07-01), Wu et al.
patent: 5925933 (1999-07-01), Colgan et al.
patent: 5930596 (1999-07-01), Klose et al.
patent: 5930668 (1999-07-01), Gardner
patent: 5942799 (1999-08-01), Danek et al.
patent: 5960313 (1999-09-01), Jun
patent: 5989718 (1999-11-01), Smith et al.
patent: 6025261 (2000-02-01), Farrar et al.
patent: 6069389 (2000-05-01), Sasaki
patent: 6080646 (2000-06-01), Wang
patent: 6107208 (2000-08-01), Cheng et al.
patent: 6140243 (2000-10-01), Wallace et al.
patent: 6150252 (2000-11-01), Hsu et al.
patent: 6157082 (2000-12-01), Merchant et al.
patent: 6180509 (2001-01-01), Huang et al.
patent: 6211562 (2001-04-01), Forbes et al.
patent: 6245663 (2001-06-01), Zhao et al.
patent: 6265602 (2001-07-01), Voit et al.
patent: 6271551 (2001-08-01), Schmitz et al.
patent: 6455937 (2002-09-01), Cunningham
patent: 6558739 (2003-05-01), Liu et al.
patent: 2002/0014672 (2002-02-01), Noble et al.
patent: 05-062925 (1993-03-01), None
The Handbook of Binary Phase Diagrams, 4, Genium Publishing, results summarized from the Constitution of Binary Alloys, pp. 916-919, 1985; First Supplement to Constitution of Binary Alloys, pp. 508-509, 1985; Second Supplement to Constitution of Binar Alloys, pp. 494-495, 1985,(1987),10 pages.
“Merriam-Webster's Collegiate Dictionary”,10 th Edition, (1998),pp. 610.
ANONYMOUS, “Method to Reduce Mechanical Stress Within the Emitter of Bipolar Transistors”,IBM Technical Disclosure Bulletin, 28, (Sep. 1, 1985),1442.
Ashburn, P , et al., “Comparison of Experimental and Theoretical Results on Polysilicon Emitter Bipolar Transistors”,IEEE Trans. on Electron Devices, vol. ED-31, (1984),853-60.
Berezhnoi, A. ,Silicon and its Binary Systems, Consultants Bureau, New York,(1960),84.
Cherkasov, Y A., et al., “Optical information media based on an amorphous photoconductor with high avalanche amplification—the amorphous analog of trigonal selenium”,Journal of Optical Technology, vol. 64, No. 7, (Jul. 7, 1997),627-32.
Chor, E F., et al., “Emitter Resistance of Arsenic- and Phosphorus-Doped Polysilicon Emitter Transistors”,IEEE Trans. on Electron Devices, 6(10), (Oct. 1985),pp. 516-518.
Fukuda, Y. , et al., “A New Fusible-Type Programmable Element Composed of Aluminum and Polysilicon”,IEEE Trans. on Electron Devices, ED-33, (Feb. 1986),250-253.
Hamakawa, Y. , et al., “Optoelectronics and Photovoltaic Applications of Microcrystalline SiC”,Materials Research Society Symposium Proceedings, 164, Boston, MA,(Nov. 29-Dec. 1, 1989),291-301.
Hanna, J. , et al., “Early Stage of Polycrystalline Growth of Ge and SiGe by Reactive Thermal CVD from GeF(4) and Si(2)H(6)”,Materials Res. Soc. Symp. Proc., 358, Boston, MA,(Nov./Dec. 1994),877-881.
Hansen, P. ,Constitution of Binary Alloys, McGraw-Hill, New York,(1958),103.
Hiraki, A. , et al., “Formation of Silicon Oxide over Gold Layers on Silicon Substrates”,Journal of Applied Physics, 43, (Sep. 1972),3643-3649.
Hiraki, A. , et al., “Low-Temperature Migration of Silicon in Metal Films on Silicon Substrates Studiedby Backscattering Techniques”,J. Vacuum Science and Tech., 9, (Jan./Feb. 1972),155-158.
Hori, H. , et al., “Novel High Aspect Ratio Aluminum Plug for Logic/DRAM LSIs Using Polysilicon-Aluminum Substitute(PAS)”,IEEE, IDEM, Fujitsu Laboratories Limited,(Dec. 1996),14.7.1-14.7.3.
Horie, H. , et al., “Novel High Aspect Ratio Aluminum Plug for Logic/DRAM LSI's Using Polysilicon-Aluminum Substitute”,Technical Digest: IEEE International Electron Devices Meeting, San Francisco, CA,(1996),946-948.
Hurley, P. , et al., “Low Temperature Plasma Oxidation of Polycrystalline Silicon”,Proc. 7th European Conf. on Insulating Films on Semicond
Ahn Kie Y.
Forbes Leonard
Micro)n Technology, Inc.
Ngo Ngan V.
Schwegman Lundberg Woessner & Kluth P.A.
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