Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-06
2005-12-06
Trinh, Michael (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S338000, C257S350000, C257S351000, C257S357000, C257S369000, C257S371000, C257S372000, C257S373000, C257S374000, C257S375000, C257S376000, C257S377000, C257S378000, C257S517000, C257S526000, C257S552000
Reexamination Certificate
active
06972466
ABSTRACT:
Complementary metal-oxide-semiconductor (CMOS) integrated circuits with bipolar transistors and methods for fabrication are provided. A bipolar transistor may have a lightly-doped base region. To reduce the resistance associated with making electrical contact to the lightly-doped base region, a low-resistance current path into the base region may be provided. The low-resistance current path may be provided by a base conductor formed from heavily-doped epitaxial crystalline semiconductor. Metal-oxide-semiconductor (MOS) transistors with narrow gates may be formed on the same substrate as bipolar transistors. The MOS gates may be formed using a self-aligned process in which a patterned gate conductor layer serves as both an implantation mask and as a gate conductor. A base masking layer that is separate from the patterned gate conductor layer may be used as an implantation mask for defining the lightly-doped base region.
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Liang Minchang
Liu Yow-Juang
Richter Fangyun
Altera Corporation
Soward Ida M.
Treyz G. Victor
Trinh Michael
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