Bipolar transistors having vertically arrayed collector-base-emi

Details Bipolar transistors having vertically arrayed collector-base-emi Bipolar transistors having vertically arrayed collector-base-emi

1984-01-17

1985-07-30

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29579, 29576B, 148 15, 148187, 148188, H01L 21225

Patent

active

045312826

ABSTRACT:
In a bipolar transistor, around the border line of the surface of a base region formed on a semiconductor substrate is formed a base electrode having a constant width of less than one micron and made of polycrystalline silicon. An island shaped emitter region is formed in the base region and an emitter electrode is formed on the surface of the emitter region. The emitter electrode is electrically isolated from the base electrode by an insulating film extending between the periphery of the emitter region and the base electrode.

REFERENCES:
patent: 4006046 (1977-02-01), Pravin
patent: 4087986 (1978-04-01), Aoki et al.
patent: 4157269 (1979-06-01), Ning et al.
patent: 4417385 (1983-11-01), Temple

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