Bipolar transistors

Details Bipolar transistors Bipolar transistors

1985-03-14

1990-04-24

Carroll, J.

357 34, 357 54, 357 71, H01L 2972, H01L 2934, H01L 2904, H01L 2348

Patent

active

049204017

ABSTRACT:
In a bipolar transistor, around the border line of the surface of a base region formed on a semiconductor substrate is formed a base electrode having a constant width of less than one micron and made of polycrystalline silicon. An island shaped emitter region is formed in the base region and an emitter electrode is formed on the surface of the emitter region. The emitter electrode is electrically isolated from the base electrode by an insulating film extending between the periphery of the emitter region and the base electrode.

REFERENCES:
patent: 3896473 (1975-07-01), DiLorenzo et al.
patent: 3925880 (1975-12-01), Rosvold
patent: 3945030 (1976-03-01), Seales
patent: 4531282 (1985-07-01), Sakai et al.

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