Bipolar transistor with self-aligned retrograde extrinsic...

Details Bipolar transistor with self-aligned retrograde extrinsic... Bipolar transistor with self-aligned retrograde extrinsic...

2007-08-15

2010-06-08

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S320000, C438S364000, C438S369000, C438S370000, C438S371000, C438S372000, C438S373000

Reexamination Certificate

active

07732292

ABSTRACT:
Disclosed is a method of forming a transistor in an integrated circuit structure that begins by forming a collector in a substrate and an intrinsic base above the collector. Then, the invention patterns an emitter pedestal for the lower portion of the emitter on the substrate above the intrinsic base. Before actually forming the emitter or associates spacer, the invention forms an extrinsic base in regions of the substrate not protected by the emitter pedestal. After this, the invention removes the emitter pedestal and eventually forms the emitter where the emitter pedestal was positioned.

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Supplementary European Search report—application No. 05820748.1.

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