Bipolar transistor test structure with lateral test probe pads

Details Bipolar transistor test structure with lateral test probe pads Bipolar transistor test structure with lateral test probe pads

2005-10-25

2005-10-25

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C257S047000, C257S565000

Reexamination Certificate

active

06958491

ABSTRACT:
Test probe pads are located lateral to, and spaced from, the emitter, base or collector region of a bipolar transistor, preferably on separate pedestals, and connected to their respective transistor regions by air bridges. The probe pads, transistor contacts and air bridges are preferably formed as common metallizations. In the case of an HBT, a gap in the subcollector below the air bridges insulates the test transistor from capacitor loading by the probe pads. The test transistors can be used to characterize both themselves and functional circuit transistors fabricated with the same process on the same wafer by testing at an intermediate stage of manufacture, thus allowing wafers to be discarded without completing the manufacture if their transistors do not meet specifications.

REFERENCES:
patent: 4079505 (1978-03-01), Hirano et al.
patent: 4283733 (1981-08-01), Aomura
patent: 5410163 (1995-04-01), Murakami
patent: 6194739 (2001-02-01), Ivanov et al.
patent: 6605825 (2003-08-01), Brar et al.

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