Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-08
2005-03-08
Quach, T. N. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S511000, C257S592000
Reexamination Certificate
active
06864542
ABSTRACT:
A method of manufacturing a bipolar transistor in a P-type substrate, including the steps of forming in the substrate a first N-type area; forming by epitaxy a first silicon layer; forming in this first layer, and substantially above the first area a second heavily-doped P-type area separate from the second area; forming at the periphery of this second area a third N-type area; forming by epitaxy a second silicon layer; forming a deep trench crossing the first and second silicon layers, penetrating into the substrate and laterally separating the second area from the third area; and performing an anneal such that the dopant of the third area is in continuity with that of the first area.
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French Search Report from French priority patent application No. 00 04588 filed Apr. 10, 2000.
Gris Yvon
Schwartzmann Thierry
Jorgenson Lisa K.
Morris James H.
Quach T. N.
STMicroelectronics S.A.
Wolf Greenfield & Sacks P.C.
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