Bipolar transistor having semiconductor patterns filling...

Details Bipolar transistor having semiconductor patterns filling... Bipolar transistor having semiconductor patterns filling...

2006-01-24

2009-06-30

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

C257S588000, C257SE29185

Reexamination Certificate

active

07554174

ABSTRACT:
Disclosed are a bipolar transistor comprising an emitter terminal and a base terminal having substantially equal heights, and a method of fabricating the same. The bipolar transistor comprises a silicon-germanium layer acting as a base and formed on a semiconductor layer acting as a collector. The bipolar transistor further comprises an insulating layer having contact windows for an emitter terminal and a collector terminal. The emitter and collector terminals are formed by forming a polysilicon layer filling the contact windows and performing a planarization process on the polysilicon layer. An ion implantation process is performed to form a polysilicon emitter terminal and a polysilicon base terminal.

REFERENCES:
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patent: 2001/0017399 (2001-08-01), Oda et al.
patent: 2004/0094823 (2004-05-01), Matsuno
patent: 2004/0251515 (2004-12-01), Yang et al.
patent: 2005/0001238 (2005-01-01), Oue et al.
patent: 2003-303828 (2003-10-01), None
patent: 1020030027313 (2003-04-01), None
patent: 1020030045941 (2003-06-01), None

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