Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With means to reduce minority carrier lifetime
Patent
1993-03-16
1994-08-23
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With means to reduce minority carrier lifetime
257593, 257607, 257655, 257928, H01L 2908, H01L 2932
Patent
active
053410220
ABSTRACT:
A semiconductor device having a reduced leakage current is fabricated in a short time at a low cost with excellent controllability. A buried layer (20) which includes a principal buried layer (21) of high ion concentration containing secondary defects (22) sandwiched between secondary buried layers (3a, 3b) of low ion concentration from upper and lower directions is formed on a semiconductor substrate (1). The secondary defects (22) have stable gettering effects for reducing defects caused during formation of a transistor (200) and contamination by heavy metals. Further, the secondary buried layers (3a, 3b) prevent depletion layers from reaching the secondary defects (22). The semiconductor device can be formed in a short time since no epitaxial growth is employed.
REFERENCES:
patent: 4716451 (1987-12-01), Hsu et al.
patent: 4796073 (1989-01-01), Bledsoe
patent: 5151765 (1992-09-01), Yamauchi
IEEE Transactions on Electron Devices, vol. 35, No. 10, Oct. 1988, pp. 1616-1619, H. J. Bohm, et al., "Megaelectronvolt Phosphorus Implantation for Bipolar Devices".
Kuroi Takashi
Kusunoki Shigeru
Hardy David B.
Hille Rolf
Mitsubishi Denki & Kabushiki Kaisha
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