Bipolar transistor having a high ion concentration buried floati

Details Bipolar transistor having a high ion concentration buried floati Bipolar transistor having a high ion concentration buried floati

1993-03-16

1994-08-23

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With means to reduce minority carrier lifetime

257593, 257607, 257655, 257928, H01L 2908, H01L 2932

Patent

active

053410220

ABSTRACT:
A semiconductor device having a reduced leakage current is fabricated in a short time at a low cost with excellent controllability. A buried layer (20) which includes a principal buried layer (21) of high ion concentration containing secondary defects (22) sandwiched between secondary buried layers (3a, 3b) of low ion concentration from upper and lower directions is formed on a semiconductor substrate (1). The secondary defects (22) have stable gettering effects for reducing defects caused during formation of a transistor (200) and contamination by heavy metals. Further, the secondary buried layers (3a, 3b) prevent depletion layers from reaching the secondary defects (22). The semiconductor device can be formed in a short time since no epitaxial growth is employed.

REFERENCES:
patent: 4716451 (1987-12-01), Hsu et al.
patent: 4796073 (1989-01-01), Bledsoe
patent: 5151765 (1992-09-01), Yamauchi
IEEE Transactions on Electron Devices, vol. 35, No. 10, Oct. 1988, pp. 1616-1619, H. J. Bohm, et al., "Megaelectronvolt Phosphorus Implantation for Bipolar Devices".

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