Bipolar transistor having a collector well with a particular con

Details Bipolar transistor having a collector well with a particular con Bipolar transistor having a collector well with a particular con

1994-10-11

1996-06-18

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257370, 257588, H01L 2976, H01L 2994, H01L 27082

Patent

active

055280668

ABSTRACT:
A bipolar transistor module which can be implemented into existing CMOS processes without the use of buried layers of epitaxy is described. The transistor makes use of a synthesis of new ideas to achieve high performance. Extended polysilicon electrodes (2,4,6) are utilised to reduce device dimensions and a compatible well is described which maintains a p-channel MOS transistor electrical characteristics whilst lowering the collector series resistance.

REFERENCES:
patent: 3723199 (1973-03-01), Vora
patent: 4573256 (1986-03-01), Lechaton et al.
patent: 4949145 (1990-08-01), Yano et al.
patent: 4966865 (1990-10-01), Welch et al.
patent: 5109262 (1992-04-01), Kadota et al.
patent: 5245209 (1993-09-01), Ishigaki
patent: 5358883 (1994-10-01), Burger et al.

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