Bipolar transistor FINFET technology

Details Bipolar transistor FINFET technology Bipolar transistor FINFET technology

2007-08-13

2010-11-16

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S382000, C257S385000, C438S189000, C438S202000

Reexamination Certificate

active

07834403

ABSTRACT:
This document discusses, among other things, apparatus having at least one CMOS transistor overlying a substrate; and at least one finned bipolar transistor overlying the substrate and methods for making the apparatus.

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Tomislav Suligoj, Haitao Liu, Johnny K.O. Sin, Kenneth Tsui, Rongming Chu, Kevin J. Chen, Petar Biljanovic, Kang L. Wang; A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs; Received Dec. 10, 2003; accepted Mar. 15, 2004; Solid-State Electronics 48 (2004); pp. 2047-2050.

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