Bipolar transistor fabrication utilizing CMOS techniques

Details Bipolar transistor fabrication utilizing CMOS techniques Bipolar transistor fabrication utilizing CMOS techniques

1990-07-27

1991-11-12

Hille, Rolf

357 35, 357 59, H01L 2972

Patent

active

050652095

ABSTRACT:
Disclosed is a bipolar transistor and a method of fabrication thereof compatible with MOSFET devices. A transistor intrinsic base region (54) is formed in the face of a semiconductor well (22), and covered with a gate oxide (44). The gate oxide (44) is opened, and doped polysilicon is deposited thereover to form a polyemitter structure (68) in contact with the base region (54). Sidewall oxide (82, 84) is formed on the polyemitter strucure (60). A collector region (90) and an extrinsic base region (100) are formed in the semicondcutor well (22) and self aligned with respect to opposing side edges of the polyemitter sidewall oxide (82, 84).

REFERENCES:
patent: 4740482 (1988-04-01), Hirao
patent: 4974046 (1990-11-01), Vora

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