Bipolar transistor fabrication process with an ion implanted emi

Details Bipolar transistor fabrication process with an ion implanted emi Bipolar transistor fabrication process with an ion implanted emi

1979-06-22

1981-01-06

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 34, 357 91, H01L 2122, H01L 2126

Patent

active

042434351

ABSTRACT:
A very high current ion implanted emitter is formed in a diffused base. Windows are made through the silicon nitride and silicon dioxide layes to both the base contact and the emitter regions using a resist mask. These regions are then protected by resist and the collector contact window is opened through the remainder of the silicon dioxide layer to the reach through region. A screen oxide is then grown in all the exposed areas after the removal of the resist mask. A resist mask is applied which covers only the base and Schottky anode regions. Arsenic is then implanted through the exposed screened areas followed by an etch back step to remove the top damaged layer. With some remaining screen oxide serving as a cap, the emitter drive-in is done.

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patent: 3928081 (1975-12-01), Marley, Jr. et al.
patent: 3928082 (1975-12-01), Schwettmann et al.
patent: 3945856 (1976-03-01), Koenig et al.
patent: 4018627 (1977-04-01), Polata
patent: 4046606 (1977-09-01), Lambert
patent: 4106954 (1978-08-01), De Brebisson et al.
patent: 4118250 (1978-10-01), Horng et al.
patent: 4131497 (1978-12-01), Feng et al.
patent: 4135954 (1979-01-01), Chang et al.
Horng et al., "HIgh Performance Bipolar Transistor. . . ", IBM-TDB, 21 (1979), 3202.
Barile et al., "Implanted Emitter Process . . . ", IBM-TDB, 18 (1975), 2177.
Doulin et al., "Fabricating Ion-Implanted Regions . . . ", IBM-TDB, 19 (1977), 3407.
Lee, "Bipolar Transistor . . . Process", IBM-TDB, 20 (1977), 1753.

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