Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Reexamination Certificate
2005-05-17
2005-05-17
Guerrero, Maria F. (Department: 2822)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
C438S234000, C438S313000, C438S376000, C438S356000, C438S357000
Reexamination Certificate
active
06893934
ABSTRACT:
A Si1-xGexlayer111bfunctioning as the base composed of an i—Si1-xGexlayer and a p+Si1-xGexlayer is formed on a collector layer102, and a Si cap layer111a as the emitter is formed on the p+Si1-xGexlayer. An emitter lead electrode129, which is composed of an n−polysilicon layer129b containing phosphorus in a concentration equal to or lower than the solid-solubility limit for single-crystal silicon and a n+polysilicon layer129acontaining phosphorus in a high concentration, is formed on the Si cap layer111ain a base opening118. The impurity concentration distribution in the base layer is properly maintained by suppressing the Si cap layer111afrom being doped with phosphorus (P) in an excessively high concentration. The upper portion of the Si cap layer111amay contain a p-type impurity. The p-type impurity concentration distribution in the base layer of an NPN bipolar transistor is thus properly maintained.
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Asai Akira
Ohnishi Teruhit
Guerrero Maria F.
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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