Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-06-07
1998-08-11
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257371, 257336, 257344, 257408, H01L 2976
Patent
active
057930856
ABSTRACT:
A bipolar transistor, comprising a collector region, a base region, and an emitter region, is a type which is compatible to CMOS processes leading to the formation, on a semiconductor substrate, of N-channel and P-channel MOS transistors having respective source and drain regions. In such bipolar transistor, the collector region is a substrate diffused pocket and the base region is formed within the diffused pocket simultaneously with the source and drain regions of the P-channel MOS transistors. Further, the emitter region is incorporated, in turn, to the base region simultaneously with the source and drain regions of the N-channel MOS transistors.
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Ghio Emilio
Vajana Bruno
Carlson David V.
SGS--Thomson Microelectronics S.r.l.
Wojciechowicz Edward
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