Bipolar transistor and semiconductor integrated circuit device

Details Bipolar transistor and semiconductor integrated circuit device Bipolar transistor and semiconductor integrated circuit device

1999-02-19

2000-10-24

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257370, 257378, 438202, 438203, H01C 2976

Patent

active

061371475

ABSTRACT:
A bipolar transistor has a semiconductor region of a first conductivity type. A collector region of the first conductivity type and a base region of a second conductivity type are disposed within the semiconductor region. An emitter region of the first conductivity type and a base electrode region of the second conductivity type are disposed within a surface of the base region in self-alignment arrangement. At least one polycrystalline silicon layer is disposed on the entire surface of the base region except for portions of the surface of the base region overlying the emitter region and the base electrode region.

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patent: 5504364 (1996-04-01), Chang et al.
patent: 5731617 (1998-03-01), Suda
patent: 5736776 (1998-04-01), Yamamoto et al.
patent: 5780329 (1998-07-01), Randazzo et al.
patent: 5856218 (1999-01-01), Kinoshita et al.
patent: 5886387 (1999-03-01), Nishigori et al.
patent: 5917222 (1999-06-01), Smayling et al.

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