Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-29
2008-01-29
Doan, Theresa T. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S370000, C257S567000, C257SE29178, C257SE29178, C257SE31131, C257SE31062
Reexamination Certificate
active
11079778
ABSTRACT:
A bipolar transistor is provided, which is low in collector-to-emitter saturation voltage, small in size and to be manufactured by a reduced number of processes, and a semiconductor device formed with such a bipolar transistor and a MOS transistor on a same substrate. A high concentration region for reducing the collector-to-emitter saturation voltage VCE(sat) is formed in a manner surrounding a base region of an NPN transistor. This high concentration region is not necessarily formed in such a depth as reaching a buried layer, and can be reduced in the spread in a lateral direction. Because a high concentration region can be formed in a same process as upon forming source and drain regions for an NMOS transistor to be formed together with an NPN transistor on a same silicon substrate, it is possible to omit a diffusion process exclusive for forming a high concentration region and hence to manufacture a semiconductor device through a reduced number of processes.
REFERENCES:
patent: 58-051556 (1983-03-01), None
patent: 63-72148 (1988-04-01), None
patent: 02-260641 (1990-10-01), None
patent: 5-206153 (1993-08-01), None
patent: 05-206153 (1993-08-01), None
patent: 2001-291781 (2001-10-01), None
Chinese Office Action issued in corresponding Chinese patent application No. 03108287.4, mailed Apr. 6, 2007 along with an English translation.
Doan Theresa T.
Hamre Schumann Mueller & Larson P.C.
Rohm & Co., Ltd.
LandOfFree
Bipolar transistor and semiconductor device using same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bipolar transistor and semiconductor device using same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar transistor and semiconductor device using same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3923209