Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-29
2008-01-29
Doan, Theresa T. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S370000, C257S567000, C257SE29178, C257SE29178, C257SE31131, C257SE31062
Reexamination Certificate
active
07323750
ABSTRACT:
A bipolar transistor is provided, which is low in collector-to-emitter saturation voltage, small in size and to be manufactured by a reduced number of processes, and a semiconductor device formed with such a bipolar transistor and a MOS transistor on a same substrate. A high concentration region for reducing the collector-to-emitter saturation voltage VCE(sat) is formed in a manner surrounding a base region of an NPN transistor. This high concentration region is not necessarily formed in such a depth as reaching a buried layer, and can be reduced in the spread in a lateral direction. Because a high concentration region can be formed in a same process as upon forming source and drain regions for an NMOS transistor to be formed together with an NPN transistor on a same silicon substrate, it is possible to omit a diffusion process exclusive for forming a high concentration region and hence to manufacture a semiconductor device through a reduced number of processes.
REFERENCES:
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patent: 2001-291781 (2001-10-01), None
Chinese Office Action issued in corresponding Chinese patent application No. 03108287.4, mailed Apr. 6, 2007 along with an English translation.
Doan Theresa T.
Hamre Schumann Mueller & Larson P.C.
Rohm & Co., Ltd.
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