Bipolar transistor and manufacturing method thereof

Details Bipolar transistor and manufacturing method thereof Bipolar transistor and manufacturing method thereof

1989-05-31

1992-11-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 32, 437 69, 437909, 437917, 437162, 437968, 437984, H01L 21265

Patent

active

051622440

ABSTRACT:
Disclosed is a method for manufacturing a high speed bipolar transistor having vertically an emitter zone, a base zone and a collector zone comprising steps of: shielding an active region; forming a bird's beak as a spacer by a field oxidation and etching; forming a base terminal; forming an emitter zone; and metallizing. By the method, a minimum spacing is effectively achieved between the base terminal and the emitter zone of the transistor by utilizing a bird's beak as a spacer by which an exact self alignment between the base terminal and the emitter zone is naturally effected.

REFERENCES:
patent: 4746623 (1988-05-01), Lane
patent: 4778774 (1988-10-01), Blossfeld
patent: 4786610 (1988-11-01), Blossfeld
patent: 4829015 (1989-05-01), Schaber et al.
patent: 4871685 (1989-10-01), Taka et al.
patent: 4882297 (1989-11-01), Blossfeld
patent: 4883772 (1989-11-01), Cleeves et al.
Bondur et al., "Selective Reactive Ion Etching of Silicon Compounds", IBM Tech. Disc. Bul., vol. 21, No. 10, Mar. 1979, pp. 4015.

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