Bipolar transistor and fabricating method thereof

Details Bipolar transistor and fabricating method thereof Bipolar transistor and fabricating method thereof

2006-04-27

2008-12-16

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Mesa or stacked emitter

C438S365000, C257S586000

Reexamination Certificate

active

07465638

ABSTRACT:
There is provided a bipolar transistor (with a respective fabrication method) that provides superior noise characteristics and gain diffusion. The fabricating method includes forming a first base region at a collector region, which in turn is formed on a substrate. A first silicon layer is formed on the base region, and a second silicon layer is formed on the first silicon layer using a forming method different from the method used in forming the first silicon layer. An emitter region is then formed from impurities at the base region by performing a thermal process.

REFERENCES:
patent: 5480815 (1996-01-01), Watanabe
patent: 5885880 (1999-03-01), Gomi
patent: 6905934 (2005-06-01), Hashimoto et al.
patent: 06-232147 (1994-08-01), None
patent: 09-195512 (1997-07-01), None
patent: 1998-074222 (1998-11-01), None

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