Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Patent
1991-12-10
1992-12-29
Wojciechowicz, Edward J.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
257515, 257518, H01L 2972
Patent
active
051756030
ABSTRACT:
A bipolar transistor excellent in the high speed performance comprises a buried region of a first conductivity type formed in a semiconductor substrate, said buried region having a high impurity concentration, a collector region of the first conductivity type formed on the buried region, a base region of a second conductivity type formed on the collector region, an emitter region of the first conductivity type formed on the base region, and an outer base region of the second conductivity type formed to surround the base and collector regions in such a manner that an ohmic contact is provided between the base region and said outer base region and a p-n junction is formed between the collector region and said outer base region. The concentration profile of the second conductivity type impurity in the depth direction of the outer base region is controlled in such a manner that, while the maximum voltage is applied between the base and emitter regions to turn the transistor on, the concentration of the second conductivity type impurity in the outer base region is kept higher than the concentration of the second conductivity type carrier in a base-widening region formed within the collector region, when the comparison is made at the same depth.
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patent: 4812894 (1989-03-01), Nakamura et al.
patent: 4839302 (1989-06-01), Kameyama et al.
Design Considerations of High-Performance Narrow-Emitter Bipolar Transistors, IEEE Electron Device Letters, Apr. 1987, vol. EDL-8, No. 4, pp. 174-175.
Self-Aligned Transistor with Sidewall Base Electrode, IEEE Transaction on Electron Devices 1982, vol. ED-29, No. 4, pp. 596-600.
On the Punchthrough Characteristics of Advanced Self-Aligned Transistors, IEEE Transaction on Electron Devices, 1987, vol. ED-34, No. 7, pp. 1519-1523.
Flat Emitter Transistor with Self-Aligned Base, Japanese Journal of Applied Physics, 1981, vol. 20, Supplement 20-1, pp. 149-153.
Kabushiki Kaisha Toshiba
Wojciechowicz Edward J.
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